http://www.freshpatents.com/Single-crystal-oriented-crystal-and-epitaxy-growth-processes--non-coating-apparatus-therefor-dtnewntc117.php USPTO Class 117 - Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor en-us Thu, 18 Dec 2008 23:58:20 -0800 1000 Wednesday Thursday Friday Saturday Sunday 141 31 http://www.freshpatents.com/index.php?rss=true http://www.freshpatents.com/images/freshpatentsnav_rss.gif http://www.freshpatents.com/Single-crystal-manufacturing-method-dt20081211ptan20080302294.php Thu, 18 Dec 2008 23:58:20 -0800 Single crystalline ingots can be stably pulled free from dislocation and with a good crystal shape by actuating a crystal driving unit so as to immerse a seed crystal in a silicon melt, and controlling the crystal driving unit and a crucible driving unit under predetermined conditions so as to... http://www.freshpatents.com/Method-of-evaluating-quality-of-silicon-single-crystal-dt20081211ptan20080302295.php Thu, 18 Dec 2008 23:58:20 -0800 In the crystal growth rate (V), there is such a permissible range that the given quality of silicon single crystal can be maintained. This permissible range is determined in advance. The log data of crystal growth rate (V) is measured in the pulling up of silicon single crystal, and using... http://www.freshpatents.com/Method-and-apparatus-for-growing-a-ribbon-crystal-with-localized-cooling-dt20081211ptan20080302296.php Thu, 18 Dec 2008 23:58:20 -0800 A method of growing ribbon crystal provides a crucible containing molten material, and passes at least two strings through the molten material to produce a partially formed ribbon crystal. The method then directs a fluid to a given portion of the partially formed ribbon crystal to convectively cool the given... http://www.freshpatents.com/Method-of-recovering-sodium-metal-from-flux-dt20081211ptan20080302297.php Thu, 18 Dec 2008 23:58:20 -0800 The medium is a hydrocarbon, for example. It is provided a method for gently and safely recovering only sodium metal from a flux containing sodium metal in a short time and in a reusable form. Flux 23 is heated in a medium 19 unreactive with sodium metal 22 at a temperature... http://www.freshpatents.com/Highly-uniform-group-iii-nitride-epitaxial-layers-on-100-millimeter-diameter-silicon-carbide-substrates-dt20081211ptan20080302298.php Thu, 18 Dec 2008 23:58:20 -0800 A semiconductor structure is disclosed that includes a silicon carbide wafer having a diameter of at least 100 mm with a Group III nitride heterostructure on the wafer that exhibits high uniformity in a number of characteristics. These include: a standard deviation in sheet resistivity across the wafer less than...