FreshPatents.com: Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor - USPTO Class 117 Patent Applications Update http://www.freshpatents.com/Single-crystal-oriented-crystal-and-epitaxy-growth-processes--non-coating-apparatus-therefor-dtnewntc117.php USPTO Class 117 - Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor en-us Mon, 6 Feb 2012 13:28:31 -0800 1000 Wednesday Thursday Friday Saturday Sunday FreshPatents.com 141 31 http://www.freshpatents.com/index.php?rss=true http://www.freshpatents.com/images/freshpatentsnav_rss.gif Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system http://www.freshpatents.com/-dt20120202ptan20120024222.php Mon, 6 Feb 2012 13:28:31 -0800 A control system and method for controlling temperatures while performing a MBE deposition process, wherein the control system comprises a MBE growth structure; a heater adapted to provide heat for the MBE deposition process on the MBE growth structure; and a control computer adapted to receive a plurality of dynamic... Thin films and methods of making them using cyclohexasilane http://www.freshpatents.com/-dt20120202ptan20120024223.php Mon, 6 Feb 2012 13:28:31 -0800 Cyclohexasilane is used in chemical vapor deposition methods to deposit epitaxial silicon-containing films over substrates. Such methods are useful in semiconductor manufacturing to provide a variety of advantages, including uniform deposition over heterogeneous surfaces, high deposition rates, and higher manufacturing productivity. Furthermore, the crystalline Si may be in situ doped...